silicon-germanium-sige-nanostructures

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Silicon Germanium Sige Nanostructures

Author : Y. Shiraki
ISBN : 9780857091420
Genre : Technology & Engineering
File Size : 73. 97 MB
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Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Silicon Germanium Sige Nanostructures For Thermoelectric Devices Recent Advances And New Approaches To High Thermoelectric Efficiency

Author : Jaime Andrés Pérez-Taborda
ISBN : OCLC:1154265941
Genre : Science
File Size : 26. 64 MB
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Silicon and germanium present distinct and interesting transport properties. However, composites made of silicon-germanium (SiGe) have resulted in a breakthrough in terms of their transport properties. Currently, these alloys are used in different applications, such as microelectronic devices and integrated circuits, photovoltaic cells, and thermoelectric applications. With respect to thermoelectricity, in the last decades, Si0.8Ge0.2 has attracted significant attention as an energy harvesting material, for powering space applications and other industrial applications. This chapter focuses on the recent advances and new approaches in silicon-germanium (Si1−xGex) nanostructures for thermoelectric devices with high thermoelectric efficiency obtained through magnetron sputtering.

Properties Of Silicon Germanium And Sige Carbon

Author : Erich Kasper
ISBN : 0852967837
Genre : Technology & Engineering
File Size : 71. 51 MB
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The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.

New Research On Silicon

Author : Vitalyi Igorevich Talanin
ISBN : 9789535131595
Genre : Science
File Size : 61. 93 MB
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The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.

Properties Of Nanostructured Silicon On Insulator Electric Force Microscopy

Author : Emma Rosamond Tevaarwerk
ISBN : WISC:89090286139
Genre :
File Size : 80. 93 MB
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Solution Synthesis And Characterization Of Silicon And Silicon Germanium Nanoparticles

Author : Katherine Ann Pettigrew
ISBN : UCAL:X68783
Genre :
File Size : 22. 3 MB
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Sige Ge And Related Compounds 3 Materials Processing And Devices

Author : David Harame
ISBN : 9781566776561
Genre : Electronic apparatus and appliances
File Size : 27. 93 MB
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Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Materials Issues In Novel Si Based Technology Volume 686

Author : William G. En
ISBN : UOM:39015055879459
Genre : Technology & Engineering
File Size : 45. 6 MB
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This book from the Materials Research Society reflects the increasing need for new materials to continue the Moore's Law scaling that has been the backbone of silicon-based semiconductors. The relatively simple physical dimension reduction and optimization of the past is being replaced with increasingly complex implementation of novel materials to achieve the technology scaling. New materials such as strained Si on SiGe, silicon-on-insulator, and high-k dielectrics are now making their way into mainstream CMOS logic technology. Soon, the future of silicon devices will be based not on how well the technology can be made smaller, but on how well new materials can be successfully integrated. Topics include: group-IV alloy and strained materials and devices; advanced CMOS - SOI and vertical devices; silicon-based substrates and device processing; MILC materials growth for CMOS and TFT; nanocrystal memories; growth of nanostructured materials; nanoscale devices; nanostructures; and advanced CMOS gate stacks and metallization.

Physics Briefs

Author :
ISBN : UOM:39015027829855
Genre : Physics
File Size : 43. 44 MB
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Silicon Germanium Nanowire Heterojunctions Optical And Electrical Properties

Author : Xiaolu Wang
ISBN : OCLC:1222920013
Genre :
File Size : 64. 44 MB
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Semiconductor nanowires are quasi-one-dimensional objects with unique physical properties and strong potential in nanophotonics, nanoelectronics, biosensing, and solar cell devices. The next challenge in the development of nanowire functional structures is the nanowire axial heterojunctions, especially lattice mismatched heterojunctions. Si and Ge have a considerable lattice mismatch of ~ 4.2% as well as a mismatch in the coefficient of thermal expansion, and the formation of a Si[subscript 1-x]Ge[subscript x] transition layer at the heterointerface creates a non-uniform strain and modifies the band structures of the adjacent Si and Ge nanowire segments. These nanostructures are produced by catalytic chemical vapor deposition employing vapor-liquid-solid mechanism on (111) oriented p-type Si substrate, and they exhibit unique structural properties including highly localized strain, and short-range interdiffusion/intermixing revealed by transmission electron microscopy, scanning electron microscopy and energy dispersive x-ray spectroscopy. Our studies of the structural properties of axial Si-Ge nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire, which is in part due to a higher solubility of Ge in metal precursors. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced mechanical stress detected under intense laser radiation.

Spin Coherence In Silicon Silicon Germanium Nanostructures

Author : James L. Truitt
ISBN : WISC:89087622148
Genre :
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New Research On Optical Materials

Author : Sherman J. Litchitika
ISBN : UOM:39015066842413
Genre : Science
File Size : 20. 85 MB
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This book is the newest research on the physical properties of optical materials used in all types of lasers and optical systems. The scope includes the most important optical materials, including crystals, glasses, polymers, metals, liquids, and gases. The properties detailed include both linear and non-linear optical properties, mechanical properties, thermal properties together with many additional special properties, such as electro-, magneto-, and elasto-optic properties.

Esd

Author : Steven H. Voldman
ISBN : 9780470012901
Genre : Technology & Engineering
File Size : 81. 93 MB
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This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

Growth And Functionalization Of Group Iv Semiconductor Surfaces

Author : Collin Kwok-Leung Mui
ISBN : STANFORD:36105023742344
Genre :
File Size : 72. 64 MB
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Chemical Abstracts

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ISBN : UOM:39015057321377
Genre : Chemistry
File Size : 33. 50 MB
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Dissertation Abstracts International

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ISBN : STANFORD:36105131549656
Genre : Dissertations, Academic
File Size : 44. 72 MB
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International Aerospace Abstracts

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ISBN : STANFORD:36105021811372
Genre : Aeronautics
File Size : 27. 66 MB
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Nanostructured Semiconductors

Author : Petra Granitzer
ISBN : 9789814411103
Genre : Science
File Size : 47. 10 MB
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This book focuses on nanostructured semiconductors, their fabrication, and their application in various fields such as optics, acoustics, and biomedicine. It presents a compendium of recent developments in nanostructured and hybrid materials and also contains a collection of principles and approaches related to nano-size semiconductors. The text summarizes the recent work by renowned scientists, emphasizing the synthesis by self-assembly or prestructuring and characterization methods of such nanosize materials and also discusses the potential applications of nanostructured semiconductors and hybrid systems. The book also gives adequate coverage to the novel properties of nanostructured and low-dimensional materials.

Large Reduction In Thermal Conductivity For Sige Alloy Nanowire Wrapped With A Ge Nanoparticle Embedded Sio2 Shell

Author :
ISBN : OCLC:1051918369
Genre :
File Size : 83. 7 MB
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Abstract: We demonstrate silicon germanium (SiGe) alloy nanowires (NWs) with Ge nanoparticles (GeNPs) embedded in a SiO2 shell as a material for decreasing thermal conductivity. During thermal oxidation of SiGe NWs to form SiGe–SiO2 core–shell structures, Ge atoms were diffused into the SiO2 shell to relax the strain in the SiGe core, and agglomerated as a few nanometer-sized particles. This structure leads to a large reduction in thermal conductivity due to the GeNP–phonon interaction, while electrical conductivity is sustained because the core of the SiGe alloy NW provides a current path for the charged carriers. The thermal conductivity of the SiGe alloy NWs wrapped with a GeNP-embedded SiO2 shell is 0.41 W m −1 K −1 at 300 K.

Semiconductors

Author :
ISBN : CHI:81572572
Genre : Semiconductors
File Size : 44. 44 MB
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